Spin relaxation and coherence times for electrons at theSi/SiO2interface
نویسندگان
چکیده
منابع مشابه
Spin relaxation of conduction electrons
Prospect of building electronic devices in which electron spins store and transport information has revived interest in the spin relaxation of conduction electrons. Since spin-polarized currents cannot flow indefinitely, basic spin-electronic devices must be smaller than the distance electrons diffuse without losing its spin memory. Some recent experimental and theoretical effort has been devot...
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Lan Qing,1,2 Jing Li,2 Ian Appelbaum,2,* and Hanan Dery1,3 1Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA 2Department of Physics, Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742, USA 3Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA (Receiv...
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A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2010
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.82.195323